C/C预制体孔隙率与气相硅浸渗制备C/SiC复合材料性能关系的模型研究

复合材料科学与工程 ›› 2013, Vol. 0 ›› Issue (2): 52-56.

C/C预制体孔隙率与气相硅浸渗制备C/SiC复合材料性能关系的模型研究

刘伟^1*, 刘荣军², 曹英斌², 杨会永²

1.西北核技术研究所,西安710024;
2.国防科学技术大学,长沙410073

收稿日期:2012-05-01 发布日期:2022-03-17
作者简介:刘伟(1985-),男,硕士,主要从事陶瓷基复合材料的研究。
基金资助:
国防科技预研基金(9140c820301)

RESEARCH ON THE RELATIONSHIP MODEL BETWEEN THE POROSITY OF C/C PREFORM AND PERFORMANCE OF C/SIC COMPOSITES FABRICATED BY GASEOUS SILICON INFILTRATION

LIU Wei^1*, LIU Rong-jun², CAO Ying-bin², YANG Hui-yong²

1. Northwest Institute of Nuclear Technology,Xi'an 710024,China;
2. National University of Defense Technology,Changsha 410073,China

Received:2012-05-01 Published:2022-03-17

摘要/Abstract

摘要： 建立了C/C 预制体孔隙率与C/SiC 复合材料组成的关系模型,并通过表征不同孔隙率的C/C 预制体气相硅浸渗制备的C/SiC 复合材料的组成和力学性能对模型进行了验证。研究发现,实验结果与模型预测结果基本一致。随着C/C 预制体孔隙率的增大,C/SiC 复合材料的密度出现先上升后下降的规律,力学性能也遵从同样的规律。XRD 分析和相含量测试结果均表明复合材料的相含量与模型预测结果基本一致。实验结果与模型预测结果产生偏差的主要原因是裂解碳反应不完全。

关键词: C/C, C/SiC, 孔隙率, 模型, 气相硅浸渗

Abstract: A model used to in search of the relationship between the porosity of C/C preforms and the constitute of C/SiC composites was established and validated,where the C/SiC composites was fabricated by the gaseous silicon infiltration process with the C/C preforms possessed different porosities. The results showed that the value derived from the experiment in accord with predicted ones mostly. With the increase of porosity of C/C perform,the density of C/SiC composites also increased at first and then decreased after a critical value,so are the mechanical properties and phase content which derived from XRD analysis. The main reason for the deviation between the model and experiment is the un-totally reaction of pyrolysis carbon.

Key words: C/C, C/SiC, porosity, model, gaseous silicon infiltration

中图分类号:

TB332

刘伟, 刘荣军, 曹英斌, 杨会永. C/C预制体孔隙率与气相硅浸渗制备C/SiC复合材料性能关系的模型研究[J]. 复合材料科学与工程, 2013, 0(2): 52-56.

LIU Wei, LIU Rong-jun, CAO Ying-bin, YANG Hui-yong. RESEARCH ON THE RELATIONSHIP MODEL BETWEEN THE POROSITY OF C/C PREFORM AND PERFORMANCE OF C/SIC COMPOSITES FABRICATED BY GASEOUS SILICON INFILTRATION[J]. COMPOSITES SCIENCE AND ENGINEERING, 2013, 0(2): 52-56.

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